| 发明名称 |
Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices |
| 摘要 |
A method of making an active device is provided. A conductive line is formed in a substrate of a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). The conductive line runs alongside a gate of the MOSFET. The gate is coupled to the conductive line.
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| 申请公布号 |
US6362078(B1) |
申请公布日期 |
2002.03.26 |
| 申请号 |
US19990259647 |
申请日期 |
1999.02.26 |
| 申请人 |
INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;LIANG CHUNLIN;ROBERDS BRIAN E. |
| 分类号 |
H01L21/336;H01L21/8234;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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