发明名称 DIFFERENTIAL VOLTAGE SENSE CIRCUIT TO DETECT THE STATE OF CMOS PROCESS COMPATIBLE FUSES AT LOW SUPPLY VOLTAGES
摘要 PURPOSE: A differential voltage sense circuit to detect the state of cmos process compatible fuses at low supply voltages is provided, which is operated at low voltage levels compatible with advanced CMOS processes. CONSTITUTION: The present inventors further recognized the possibility of a race condition that occurs with the differential voltage sense circuit under some conditions of temperature, process and supply voltage ranges. These issues are resolved with the differential voltage sense circuit(800) illustrated. The circuit(800) is guaranteed to latch the data before transistors(306) are turned off by NOR gate(802). The differential voltage sense circuit(800) is considered by the inventors to be the preferred embodiment of the present invention. It is especially preferred that resistor(304) be constructed of non-silicide, doped poly silicon which is the standard gate material in all CMOS processes. Another preferred material for use in a CMOS process comprises the doped silicon that forms the N-well or P-well region, depending on the type of process employed.
申请公布号 KR20020027231(A) 申请公布日期 2002.04.13
申请号 KR20010061136 申请日期 2001.10.04
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HAROUN BAHER;HELLUMS JAMES R.;LIN HENG-CHIH
分类号 G01R31/28;G05F1/10;G11C7/06;G11C11/413;G11C17/00;G11C17/16;G11C29/04;(IPC1-7):G01R19/00 主分类号 G01R31/28
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