发明名称 |
Process for manufacturing mirror devices using semiconductor technology |
摘要 |
A method for fabricating a mirror array from a silicon on insulator substrate structure. The method includes providing a silicon-on-insulator (SOI) substrate structure, which may have a material thickness of greater than 10 microns overlying an insulating layer. The SOI material thickness is of a single crystal silicon bearing material. The method also patterns the material thickness using a deep reactive ion etching process to pattern a mirror device structure by forming a trench region that extends from a surface of the material thickness to the insulator structure; and patterns the thickness of material to form a recessed region coupled to the trench region to define a torsion bar structure. The recessed region extends from the surface of the material thickness and is less than about 80% of the mirror device thickness. The method forms an opening on a back side of the SOI substrate structure to the insulator structure. The method removes the insulator material to release the mirror device structure and the torsion bar structure.
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申请公布号 |
US6429033(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20010865851 |
申请日期 |
2001.05.24 |
申请人 |
NAYNA NETWORKS, INC. |
发明人 |
GEE DALE A.;SATHE ABHIJEET D. |
分类号 |
B81B3/00;G02B26/08;(IPC1-7):H01L21/00 |
主分类号 |
B81B3/00 |
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