| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of preventing the formation of bumps on the side wall of a silicon metal layer of a gate electrode and to provide a method of manufacturing the gate electrode. SOLUTION: The method comprises a step (a) of providing a gate electrode structure formed on a semiconductor substrate, a step (b) of conducting a short- time annealing (RTA) using a mixed gas of a nitrogen gas and a hydrogen gas on the gate electrode structure, and a step (c) of conducting a short-time thermal oxidation on the gate electrode structure. The method comprises a step (a) of providing a chamber and a gate electrode structure formed on a semiconductor substrate, a step (b) of placing the gate electrode structure in the chamber and clearing an oxygen gas from the chamber, a step (c) of conducting a short-time annealing (RTA) on the gate electrode structure, and a step (d) of conducting a short-time thermal oxidation on the gate electrode structure.
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