| 发明名称 |
Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed |
| 摘要 |
The present invention provides a method of forming a capacitor in a last metal wiring layer, and the structure so formed. The invention further provides a spacer formed around the capacitor to electrically isolate portions of the capacitor.
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| 申请公布号 |
US2002117703(A1) |
申请公布日期 |
2002.08.29 |
| 申请号 |
US20010681197 |
申请日期 |
2001.02.16 |
| 申请人 |
GAMBINO JEFFREY P.;LUCE STEPHEN E.;MCDEVITT THOMAS L.;TROMBLEY HENRY W. |
发明人 |
GAMBINO JEFFREY P.;LUCE STEPHEN E.;MCDEVITT THOMAS L.;TROMBLEY HENRY W. |
| 分类号 |
H01L21/02;H01L21/768;H01L23/522;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/02 |
| 代理机构 |
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