发明名称 |
Method for forming insulating thin films |
摘要 |
To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure.An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.
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申请公布号 |
US6448175(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20000656728 |
申请日期 |
2000.09.07 |
申请人 |
DOW CORNING TORAY SILICONE CO., LTD. |
发明人 |
KOBAYASHI AKIHIKO;MINE KATSUTOSHI;NAKAMURA TAKASHI;SASAKI MOTOSHI;SAWA KIYOTAKA |
分类号 |
H01L21/316;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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