发明名称 |
Method for using a hard mask for critical dimension growth containment |
摘要 |
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.
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申请公布号 |
US2002132485(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20010045318 |
申请日期 |
2001.11.09 |
申请人 |
TEGAL CORPORATION |
发明人 |
DEORNELLAS STEPHEN P.;JERDE LESLIE G.;COFER ALFERD |
分类号 |
H01L21/033;H01L21/308;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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