| 摘要 |
A process for forming a metal silicide layer on the surface of a conductive region in a semiconductor substrate, located at the bottom of a contact hole formed in an insulator layer, has been developed. The process features the removal of a photoresist shape, used to define the contact hole, via removal procedures that avoid the formation of a substoichiometric, silicon oxide, native oxide layer, on the top surface of the conductive region. The removal of the contact hole defining photoresist shape is realized via a chemical mechanical polishing procedure, which results in no native oxide formation, or removal of the photoresist shape can be accomplished via a combination of chemical mechanical polishing and wet clean procedure, which will form a native oxide layer, however only comprised of easily removable stoichiometric silicon oxide. The inability to remove substoichiometric silicon oxide, formed from procedures such as plasma oxygen ashing, can deleteriously influence the formation of metal silicide layers on the surface of a conductive region.
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