| 摘要 |
Composite semiconductor structures and methods are provided for communications systems, specifically, those utilizing RF signals. Antenna switches, and amplifiers in receiver and transmitter sections of the communications systems are shown that are fabricated within a compound semiconductor layer of a composite semiconductor structure is integrated with support circuitry in a non-compound semiconductor substrate. Support circuitry that may be integrated include negative voltage generation circuitry, drain current protection circuitry, and voltage regulation circuitry.
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