发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem, in a circuit block containing a plurality of CMOS circuits causing subthreshold leakage, a significant leakage current which flows throughout the block and the power consumption saving of the block being made difficult, even if the voltages between the gates and sources of the P- or N-channel MOSs of the CMOS circuits are statically adjusted to 0 V. SOLUTION: The mode of operation of the circuit block containing the plurality of CMOS circuits causing subthreshold leakage is decided, and the supply and stop of a working voltage to the block is controlled, according to the mode of operation. Consequently, power consumption of the CMOS circuits can be reduced. The power consumption reduction effect is significant, when the CMOS circuits have low working power supply voltages and a very high integration density.
申请公布号 JP2002319630(A) 申请公布日期 2002.10.31
申请号 JP20020004053 申请日期 2002.01.11
申请人 HITACHI LTD 发明人 NAKAGOME YOSHINOBU;ITO KIYOO
分类号 G11C11/417;G11C11/401;G11C11/407;G11C11/408;G11C11/409;H01L21/822;H01L21/8238;H01L21/8242;H01L27/04;H01L27/06;H01L27/092;H01L27/108;H03K19/00;(IPC1-7):H01L21/823;H01L21/824 主分类号 G11C11/417
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