发明名称 DEPOSITION APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A deposition apparatus for fabricating a semiconductor device is provided to minimize unwanted particles to attach on the surface of a silicon wafer and the backside of the apparatus by adopting inflow of inert gas into it. CONSTITUTION: A chamber(20) is main body for the deposition process. A wafer prepared for deposition is mounted on a susceptor(22). A heater(24) is placed to supply heat to it because the reaction between deposition gas and the surface of the wafer could be activated by the transferred heat through the susceptor. A heater cup(30) made of insulating material prevent loss of heat by surrounding the heater. A few of outer rings(26) are installed around the heater and have several grooves on each side of the ring and connected to susceptor by connecting pins to prevent contamination. Inert gas through the supplier is flown into the grooves and below the back of the susceptor to prevent deposition gas piling up there.
申请公布号 KR20020084478(A) 申请公布日期 2002.11.09
申请号 KR20010023770 申请日期 2001.05.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JAE GYU
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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