| 发明名称 |
Semiconductor device and manufacturing method |
| 摘要 |
In a semiconductor device comprising a resistance element electrically connected to a bipolar transistor, the bipolar transistor is formed on a silicon substrate and a predetermined resistance element is formed on an insulation film formed on the bipolar transistor based on results of measurements monitored for this transistor, in such a manner that the semiconductor device has prescribed characteristics.
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| 申请公布号 |
US6479360(B2) |
申请公布日期 |
2002.11.12 |
| 申请号 |
US20010917710 |
申请日期 |
2001.07.31 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
HIDAKA HAJIME |
| 分类号 |
H01L29/73;H01L21/02;H01L21/331;H01L21/8222;H01L27/06;H01L29/732;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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