发明名称 |
Nonvolatile semiconductor memory well voltage setting circuit without latchup and semiconductor memory device provided with the circuit |
摘要 |
A well voltage setting circuit has a P-MOS transistor for applying erase pulse, a first N-MOS transistor for applying a reference voltage Vss to a P-well in a shutdown sequence after erase pulse application, and a second N-MOS transistor for forcing the P-well to the reference voltage Vss during write and read. The first N-MOS transistor has a driving capacity set to about 1/50 of that of the second N-MOS transistor, so that a time for forcing the P-well to the reference voltage Vss is long enough to prevent occurrence of local latch-up during erase.
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申请公布号 |
US2002176284(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020083661 |
申请日期 |
2002.02.27 |
申请人 |
HIRANO YASUAKI;KOUCHI SHUICHIRO;SEKIGUCHI YOSHIHISA |
发明人 |
HIRANO YASUAKI;KOUCHI SHUICHIRO;SEKIGUCHI YOSHIHISA |
分类号 |
G11C16/06;G11C16/14;G11C16/30;H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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