发明名称 |
METHOD FOR IMPROVING SOLAR ENERGY CONVERSION EFFICIENCY OF SEMICONDUCTOR METAL OXIDE PHOTOCATALYSIS USING H2/N2 MIXED GAS PLASMA TREATMENT |
摘要 |
Disclosed is a method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, which includes rapidly performing hydrogenation and nitrogenation of a metal oxide semiconductor material through an H2/N2 mixed gas plasma treatment in a single process at room temperature, so as to enhance photocatalytic energy conversion efficiency. Specifically, disclosed is a treatment technique in which a plasma ball formed by controlling a mixing ratio of hydrogen gas to nitrogen gas in a range of 1:1 to 1:3 contacts with a surface of a metal oxide material, such that a great amount of oxygen vacancy and nitrogen elements are introduced in the surface of the metal oxide material to improve electron-hole pairs transfer ability thereof and decrease a size of the band-gap. A catalyst including the metal oxide material directly converts the solar energy into a compound by photocatalytic hydrogen generation and CO2 conversion. |
申请公布号 |
US2016376716(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201514925431 |
申请日期 |
2015.10.28 |
申请人 |
Korea Advanced Institute of Science and Technology |
发明人 |
KANG Jeung Ku;LEE Dong Ki;LEE Gyu Heon;KIM Yong-Hoon;CHOI Ji Il |
分类号 |
C25B11/04 |
主分类号 |
C25B11/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, comprising: a first process of preparing a metal oxide thin film having n-type semiconductor properties; and a second process of performing a hydrogen and nitrogen mixed gas plasma treatment on the metal oxide thin film. |
地址 |
Daejeon KR |