发明名称 METHOD FOR IMPROVING SOLAR ENERGY CONVERSION EFFICIENCY OF SEMICONDUCTOR METAL OXIDE PHOTOCATALYSIS USING H2/N2 MIXED GAS PLASMA TREATMENT
摘要 Disclosed is a method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, which includes rapidly performing hydrogenation and nitrogenation of a metal oxide semiconductor material through an H2/N2 mixed gas plasma treatment in a single process at room temperature, so as to enhance photocatalytic energy conversion efficiency. Specifically, disclosed is a treatment technique in which a plasma ball formed by controlling a mixing ratio of hydrogen gas to nitrogen gas in a range of 1:1 to 1:3 contacts with a surface of a metal oxide material, such that a great amount of oxygen vacancy and nitrogen elements are introduced in the surface of the metal oxide material to improve electron-hole pairs transfer ability thereof and decrease a size of the band-gap. A catalyst including the metal oxide material directly converts the solar energy into a compound by photocatalytic hydrogen generation and CO2 conversion.
申请公布号 US2016376716(A1) 申请公布日期 2016.12.29
申请号 US201514925431 申请日期 2015.10.28
申请人 Korea Advanced Institute of Science and Technology 发明人 KANG Jeung Ku;LEE Dong Ki;LEE Gyu Heon;KIM Yong-Hoon;CHOI Ji Il
分类号 C25B11/04 主分类号 C25B11/04
代理机构 代理人
主权项 1. A method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, comprising: a first process of preparing a metal oxide thin film having n-type semiconductor properties; and a second process of performing a hydrogen and nitrogen mixed gas plasma treatment on the metal oxide thin film.
地址 Daejeon KR