| 摘要 |
According to the present method of manufacturing a semiconductor device, since a contact hole has its opening gradually and continuously made smaller toward the lower interconnection layer, a cavity, which has been produced conventionally, would not be produced in a barrier metal layer and a metal interconnection layer formed along the side wall of the contact hole. As a result, even when the reduction in size of the semiconductor has progressed, it is possible to provide a method of manufacturing semiconductor device having its contact hole in a proper shape, and to provide such a semiconductor device.
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