发明名称 |
Method of fabricating thin film transistor |
摘要 |
The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.
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申请公布号 |
US6511871(B2) |
申请公布日期 |
2003.01.28 |
申请号 |
US20010794770 |
申请日期 |
2001.02.28 |
申请人 |
L.G. PHILIPS LCD CO., LTD |
发明人 |
JOO SEUNG-KI;KIM TAE-KYUNG |
分类号 |
H01L29/49;H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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