| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which electrical short circuit is controlled, and a method of manufacturing the same. SOLUTION: A silicon oxide film 4 is formed on a semiconductor substrate covering a gate electrode 2. Next, a silicon thermal oxide film 5 is formed on the surface of the silicon nitride film 4 by executing the thermal oxidation process to the silicon oxide film 4. When pin holes exist on the silicon nitride film 4, the insides of these pin holes are oxidized and are filled with the silicon oxide film. Next, a silicon nitride film 4a is formed by conducting unisotropic etching to the silicon nitride film. Thereafter, a contact hole 8 is formed to the silicon oxide film 6 formed on the semiconductor substrate. A bit line contact 20 is formed in the contact hole 8 and moreover a bit line 21 is also formed therein.
|
