发明名称 |
Method of fabricating a trench-structure capacitor device |
摘要 |
The novel trench capacitors have a constant or increased capacitance. Materials for a second electrode region and if appropriate a first electrode region include a metallic material, a metal nitride, or the like, and/or a dielectric region is formed with a material with an increased dielectric constant. An insulation region is formed in the upper wall region of the trench after the first electrode region or the second electrode region has been formed, by selective and local oxidation.
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申请公布号 |
US2003045068(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020233690 |
申请日期 |
2002.09.03 |
申请人 |
GUTSCHE MARTIN;HECHT THOMAS;LEONHARDT MATTHIAS;SCHRODER UWE;SEIDL HARALD |
发明人 |
GUTSCHE MARTIN;HECHT THOMAS;LEONHARDT MATTHIAS;SCHRODER UWE;SEIDL HARALD |
分类号 |
H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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