发明名称 HEAT TREATMENT APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To effectively heat a substrate in a heat treatment apparatus for subjecting a substrate to heat treatment. SOLUTION: The heat treatment apparatus 1 applies heat treatment to the substrate 9 by irradiating the substrate 9 with a light beam within a chamber composed of a body 12 and a window member 13. In this heat treatment apparatus 1, a plurality of light source units 2 for emitting the laser beam from semiconductor lasers are provided. A reflecting film is formed to the window member 13 at the region, except for the region to transmit the laser beam. Accordingly, effective heating can be conducted, using the laser beam and the reflected light from the substrate 9 can be returned to the substrate 9 through reflection by the reflecting film.
申请公布号 JP2003077857(A) 申请公布日期 2003.03.14
申请号 JP20010265373 申请日期 2001.09.03
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 FUNAYOSHI TOSHIMITSU
分类号 H01L21/268;H01L21/26;H01L21/324;(IPC1-7):H01L21/268 主分类号 H01L21/268
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