发明名称 |
Semiconductor memory device with improved flexible redundancy scheme |
摘要 |
A spare memory array having spare memory cells common to a plurality of normal sub-arrays having a plurality of normal memory cells is provided. A spare line in the spare array can replace a defective line in the plurality of normal sub-array. The defective line is efficiently repaired by replacement in an array divided into blocks or sub-arrays.
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申请公布号 |
US6545931(B2) |
申请公布日期 |
2003.04.08 |
申请号 |
US20020229001 |
申请日期 |
2002.08.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA HIDETO |
分类号 |
G11C11/401;G11C11/403;G11C11/406;G11C29/00;G11C29/04;(IPC1-7):G11C5/14 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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