发明名称 Vacuum processing apparatus for semiconductor process
摘要 A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.
申请公布号 US6565662(B2) 申请公布日期 2003.05.20
申请号 US20000739701 申请日期 2000.12.20
申请人 TOKYO ELECTRON LIMITED 发明人 AMANO KENJI;TANAKA YOSHITSUGU
分类号 H01L21/302;B01J3/03;H01J37/32;H01L21/00;H01L21/3065;(IPC1-7):H01L21/306;C23C16/00 主分类号 H01L21/302
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