| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile ferroelectric memory device and a driving method thereof enabling to reduce a layout efficiently and provide an excellent sensing margin. SOLUTION: This device is provided with a cell array block having sub-cell array blocks comprising unit cells, main bitlines constituted in one direction corresponding to sub-cell array block with a column unit, sub-bit lines connected to one terminal of a unit cell so that voltage is induced from a unit cell and constituted in the same direction as the main bitline, a sense amplifier block consisting of sense amplifiers amplifying a signal of the main bit-line used in common with the cell array block, and a switching transistor whose gate is controlled by the sub-bitline transmitting a voltage value induced by a unit cell, whose drain is connected to the main bitline, whose source is connected to a ground voltage terminal, and in which flowing current quantity is varied in accordance with voltage induced in the sub-bit line and a data value of a unit cell is current-sensed by varying voltage transmitted to the main bitline.
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