发明名称 |
Schottky diode on a silicon carbide substrate |
摘要 |
A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide layer. A trench crosses the P-type epitaxial layer and penetrates into at least a portion of the height of the N-type epitaxial layer beyond the periphery of the active area. The doping level of the P-type epitaxial layer is chosen so that, for the maximum voltage that the diode is likely to be subjected to, the equipotential surfaces corresponding to approximately ¼ to ¾ of the maximum voltage extend up to the trench.
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申请公布号 |
US6576973(B2) |
申请公布日期 |
2003.06.10 |
申请号 |
US20000747781 |
申请日期 |
2000.12.22 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
COLLARD EMMANUEL;LHORTE ANDRE |
分类号 |
H01L21/329;H01L29/24;H01L29/872;(IPC1-7):H01L29/872;H01L29/161 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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