Method for fabricating semiconductor device

摘要

A method of fabricating a semiconductor device is provided. A plurality of target patterns is formed on a substrate. The plurality of target patterns is extended in parallel to each other along a first direction. A first mask pattern extending in the first direction and including a plurality of first openings is formed. A second mask pattern extending in a second direction crossing the first direction and including a plurality of second openings is formed. Each second opening overlaps each first opening to form an overlapped opening region. A region of the plurality of target patterns is etched through the overlapped opening region using the first mask pattern and the second mask pattern as a etch mask. The region of the plurality of target patterns is overlapped with the overlapped opening region.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a plurality of target patterns on a substrate, wherein the plurality of target patterns are extended in parallel to each other along a first direction; forming a first mask pattern on the plurality of target patterns, the first mask pattern extending in the first direction and including a plurality of first openings; forming a second mask pattern on the first mask pattern, the second mask pattern extending in a second direction crossing the first direction and including a plurality of second openings, wherein each second opening overlaps each first opening to form an overlapped opening region; etching a region of the plurality of target patterns through the overlapped opening region using the first mask pattern and the second mask pattern as an etch mask, wherein the region of the plurality of target patterns is overlapped with the overlapped opening region, and wherein the plurality of target patterns includes a plurality of spacers, the first opening bisects the first mask pattern in the first direction, and the second opening bisects the second mask pattern in the second direction.