| 发明名称 |
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition |
| 摘要 |
A FinFET device includes a substrate with a buried insulator, a plurality of fins over the buried insulator, and a nitride material filing spaces between the plurality of fins. At least one sidewall of each of the plurality of fins remain uncovered by the nitride material. The nitride material may also not contact the bottom of the plurality of fins. |
| 申请公布号 |
US9472576(B2) |
申请公布日期 |
2016.10.18 |
| 申请号 |
US201514822942 |
申请日期 |
2015.08.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Adam Thomas N.;Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander;Sreenivasan Raghavasimhan |
| 分类号 |
H01L27/12;H01L21/84;H01L29/06 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
Zehrer Matthew C. |
| 主权项 |
1. A FinFET device comprising:
a substrate with a buried insulator, the buried insulator comprising a plurality of recessed portions; a plurality of fins over the buried insulator; and a nitride material filing the plurality of recessed portions between the plurality of fins, wherein at least one sidewall of each of the plurality of fins remain uncovered by the nitride material. |
| 地址 |
Armonk NY US |
