| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which reduces power consumption and to increase its performance. SOLUTION: After forming a source diffusion layer 17A and a drain diffusion layer 17B, boron ions are implanted so that concentration becomes larger than solid solubility in at least a part of regions of these diffusion layers which are turned into silicides. By heating the semiconductor substrate 11, the regions of the diffusion layers which are turned into silicides are turned into silicides to form silicide layers 21A and 21B. By heating the semiconductor substrate 11 to reactivate boron, borons in the two diffusion layers are relocated. In the horizontal direction of the semiconductor substrate 11, the source diffusion later 17A and the drain diffusion layer 17B are not expanded in the transverse direction, and in the depth direction, a boron concentration near each boundary between the silicide layer 21A and the source diffusion layer 17A and between the silicide layer 21B and the drain diffusion layer 17B become larger than that near the surface of the semiconductor substrate 11. COPYRIGHT: (C)2003,JPO
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