Method for manufacturing a capacitor of a semiconductor device

摘要

A method for manufacturing a capacitor for a semiconductor device, the method includes forming a first interlayer dielectric film pattern on a semiconductor substrate, with the interlayer dielectric film pattern having a first contact hole to expose a portion of the semiconductor substrate through the first contact hole. A contact plug is formed to fill the first contact hole and connect to the semiconductor substrate. A diffusion barrier layer pattern is formed on the contact plug, and a first conductive film pattern is formed on the diffusion layer pattern. Next a second interlayer dielectric film pattern is formed on the first dielectric film pattern and the first conductive film pattern. The second interlayer dielectric film pattern includes a second contact hole that exposes a top surface of the first conductive film pattern. A second conductive film pattern is formed on the first conductive film pattern which is exposed through the second conductive film pattern and a third conductive film is formed on the dielectric film.