| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protection diode having a small parastic capacity and small resistance and stably operating even when the thickness of an epitaxial layer thereof varies, and a manufacturing method thereof. SOLUTION: The electrostatic protection diode is formed on one main surface of a semiconductor substrate, and has a cathode formed of the epitaxial layer of one conductivity type and an anode formed of a diffused layer of the opposite conductivity type. The junction capacity of the electrostatic protection diode presented by the junction between the epitaxial layer and the diffused layer is formed by such concentrations in the junction that the junction capacity does not affect high frequency characteristics of transistors in a semiconductor integrated circuit formed on the main surface of the semiconductor substrate. COPYRIGHT: (C)2003,JPO
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