| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film field effect transistor that can be improved in operating characteristic by improving the supplying efficiency of electrons from a source electrode to an organic active layer and the discharging efficiency of electrons from the organic active layer to a drain electrode. SOLUTION: This organic thin-film field effect transistor is composed at least of the source electrode, the drain electrode, a gate insulating film, a gate electrode, and a thin film of an organic compound formed between the source and drain electrodes and the gate insulating film. Since the source and drain electrodes are formed in laminated structures of extremely thin films of an alkali metal fluoride and aluminum, the supplying efficiency of electrons from the source electrode to the organic active layer and the discharging efficiency of electrons from the organic active layer to the drain electrode are improved. Consequently, the operating characteristic of this transistor can be improved. COPYRIGHT: (C)2004,JPO
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