Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns

摘要

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure: where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.