| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory capacitor having satisfactory capacitance and conductivity. <P>SOLUTION: A method for manufacturing the memory capacitor comprises the steps of: forming a semiconductor layer preferredly composed of polysilicon on a substrate 20, defining lower electrode regions in the semiconductor layer, covering the lower electrode regions with an insulating layer 24 preferredly composed of silicon dioxide, forming on the insulating layer an upper electrode 57 preferredly composed of a metal and equipped with dopant paths therein, and forming the lower electrode by a doping process into the lower electrode region through the dopant paths. <P>COPYRIGHT: (C)2004,JPO</p> |
