| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist removing method capable of removing an altered layer such as a surface hardening layer generated in the resist by ion implantation without residuals at the time of performing the ion implantation with the resist as a mask. SOLUTION: The method is for removing the resist 16 including the altered layer 18 generated by the ion implantation from a silicon substrate 4 at the time of performing ion implantation with the resist 16 formed on the silicon substrate 4 as the mask. A plasma processing is executed to the resist 16 in the atmosphere of a process gas containing ammonia and the resist 16 including the altered layer 18 is removed. COPYRIGHT: (C)2004,JPO |
