| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating an organic semiconductor element capable of forming a low resistance electrode conveniently, and to provide an organic semiconductor element having a low resistance electrode. SOLUTION: After a gate electrode pattern is formed of a catalyst 2 using a print method at a part on a substrate 1 for forming a gate electrode 3A, the gate electrode 3A is formed by touching a plating agent causing electroless plating to the gate electrode pattern on the substrate 1 through action of the catalyst 2. After a source/drain electrode pattern is formed of the similar catalyst 2 at a part for forming a source/drain electrode 3B on an insulating layer 4 formed on the upper surface of the gate electrode 3A, similar plating agent is touched to the source/drain electrode pattern on the insulating layer 4 thus forming the source/drain electrode 3B. Finally, an organic semiconductor layer 5 is formed on the source/drain electrode 3B thus completing an organic semiconductor element. COPYRIGHT: (C)2004,JPO
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