| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the characteristics of a gate oxide layer, to restrain leakage current, and to reduce short channel effect by carrying out fluorine ion implantation after the deposition of a polysilicon layer. CONSTITUTION: A gate isolating layer(18) and the first conductive layer(19) are formed on a semiconductor substrate(10). Fluorine ion implantation and heat treatment are sequentially carried out on the resultant structure for improving the characteristics of the gate isolating layer. At this time, a fluorine ion layer is formed between the gate isolating layer and the substrate. The second conductive layer is formed on the first conductive layer. A gate electrode is formed by selectively patterning the second conductive layer, the first conductive layer, and the gate isolating layer.
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