| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus of a Si-containing DLC film that uses a gas introduction tube manufactured more easily than in the past and suppresses irregular film deposition on a work-piece.SOLUTION: A film deposition apparatus of a Si-containing DLC film includes a treatment chamber for film deposition on a work-piece, a support member for supporting the work-piece, and a gas introduction tube 20 for introducing a raw material gas. The gas introduction tube 20 has a double-tube structure equipped with an inner tube 21 and an outer tube 22. A plurality of first gas exhaust ports 21a are formed on the inner tube 21 in the longitudinal direction L of the gas introduction tube 20, while a plurality of second gas exhaust ports 22a are formed on the outer tube 22 in the longitudinal direction L. The direction of the second gas exhaust ports 22a is different from the direction of the first gas exhaust ports 21a and is toward the inside of the treatment chamber 2.SELECTED DRAWING: Figure 4 |
