| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a good-quality crystalline semiconductor film manufactured by using a catalyst element, can suppress the generation of a leak current, and further is equipped with a TFT having a small variation in characteristics. SOLUTION: The semiconductor device is equipped with at least one thin-film transistor comprising a semiconductor layer having a crystalline region including channel, source, and drain regions; a gate insulating film formed on at least channel, source, and drain regions of the semiconductor layer; and a gate electrode formed opposite to the channel region via the gate insulating film. At least one portion of the semiconductor layer includes the catalyst element for quickening crystallization. The semiconductor layer further has a gettering region containing the catalyst element with high concentration as compared with the channel region or the source and drain regions. The thickness of the gate insulating film on the gettering region is thinner than the gate insulating film on the source and drain regions. Or the gate insulating film is not formed on the gettering region. COPYRIGHT: (C)2004,JPO&NCIPI |
