| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a ZnO thin film with the c-axis uniaxially oriented in the plane of the thin film irrespective of the kind of a substrate. <P>SOLUTION: Temperature gradient is formed in the direction of orientation of the c-axis, and a ZnO thin film is deposited on a substrate 11. The temperature gradient is formed, for example, by heating one end face of a substrate base 14 with the substrate 11 installed thereon by a heater 13 while cooling the other end face opposite to the end face by a cooling unit 15. The ZnO thin film may be deposited by using a sputtering method, a CVD method, or the like. The ZnO thin film is deposited on the substrate 11 so that the c-axis is oriented in the direction of the temperature gradient. In this method, various kinds of substrates such as a metal substrate of Al, Cu or the like, a glass substrate, etc. may be employed. In addition, a ZnO single crystalline thin film of higher crystallinity and excellent quality can be obtained by depositing the ZnO thin film on a single crystal substrate by using this method. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
