DUAL BANK SYSTEM, MEMORY USED IN THE SYSTEM, AND ON-DIE TERMINATION METHOD OF THE MEMORY, IN WHICH LEAKAGE CURRENT IS REDUCED

摘要

PURPOSE: A dual bank system and a memory used in the dual bank system and an on-die termination method of the memory are provided to reduce a leakage current through an on-die termination circuit of the memory. CONSTITUTION: A memory used in the dual bank system comprises a command decoder(30), OR gates(OR1,OR2) and an on-die termination(ODT) control signal generation unit(32). The command decoder generates a write signal(WE) and a dummy write signal(DWE) and a dummy read signal(DRD) and a read signal(RD) by decoding command signals(clk,csb,rasb,casb,web) applied from the external. The OR gate(OR1) generates an on-die termination enable signal(ODTEN) by an OR logic operation of the write signal and the dummy write signal. The OR gate(OR2) generates an on-die termination disable signal(ODTIS) by an OR logic operation of the dummy read signal and the read signal. The ODT control signal generation unit enables an on-die termination control signal(PODT) in response to the on-die termination enable signal, and disables the on-die termination control signal in response to the on-die termination disable signal.