发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor device is described. The method of fabricating a semiconductor device comprises providing a fin formed to protrude from a substrate and a plurality of gate electrodes formed on the fin to intersect the fin; forming first recesses in the fin on at least one side of the respective gate electrodes; forming an oxide layer on the surfaces of the first recesses; and expanding the first recesses into second recesses by removing the oxide layer. Related devices are also disclosed. |
申请公布号 |
US9461148(B2) |
申请公布日期 |
2016.10.04 |
申请号 |
US201313799291 |
申请日期 |
2013.03.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Jae-Young;Cha Ji-Hoon;Baek Jae-Jik;Koo Bon-Young;Moon Kang-Hun;Yoon Bo-Un |
分类号 |
H01L21/8234;H01L29/66 |
主分类号 |
H01L21/8234 |
代理机构 |
Myers Bigel & Sibley, P.A. |
代理人 |
Myers Bigel & Sibley, P.A. |
主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
providing a fin formed to protrude from a substrate and a plurality of gate electrodes formed on the fin to intersect the fin, the gate electrodes comprising gate spacers on sidewalls thereof; forming first recesses in the fin on at least one side of the respective gate electrodes; forming an oxide layer in the first recesses; expanding the first recesses into second recesses by removing the oxide layer and partially exposing respective bottom surfaces of the gate spacers; forming source/drain regions in the second recesses by epitaxial growth, wherein the gate electrodes comprise dummy gate electrodes; removing the dummy gate electrodes after forming the source/drain regions in the second recesses; and forming a metal layer on the fin after removing the dummy gate electrodes. |
地址 |
KR |