| 发明名称 | Molybdenum disulfide film formation and transfer to a substrate | ||
| 摘要 | A method is provided for forming an unsupported MoS2 layer in an aqueous medium, the method comprising the steps of: providing an assembly of a Mo oxide layer on a Si substrate; annealing said assembly in presence of H2S at a temperature sufficient for forming a MoS2 layer; and contacting the annealed assembly with an aqueous medium. This unsupported MoS2 layer can then be transferred by dip-coating to another substrate such as a dielectric substrate. | ||
| 申请公布号 | US9472401(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201514938657 | 申请日期 | 2015.11.11 |
| 申请人 | IMEC VZW;Katholieke Universiteit Leuven, KU Leuven R & D | 发明人 | Chiappe Daniele |
| 分类号 | H01L21/02;H01L21/324;H01L29/24;C01G39/02;C01G39/06 | 主分类号 | H01L21/02 |
| 代理机构 | Knobbe Martens Olson & Bear, LLP | 代理人 | Knobbe Martens Olson & Bear, LLP |
| 主权项 | 1. A method for forming an unsupported MoS2 layer in an aqueous medium, comprising: providing an assembly of a Mo oxide layer on a Si substrate; annealing the assembly in a presence of H2S at a temperature sufficient to form an annealed MoS2 layer; and contacting the annealed assembly with an aqueous medium, whereby an unsupported MoS2 layer is obtained. | ||
| 地址 | Leuven BE | ||