| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a film which is a low dielectric film useful for manufacturing an IC device, having high mechanical strength, and can be used at a high temperature and is easy in manufacturing. <P>SOLUTION: A method for depositing a silicon carbide layer on a substrate comprises a process of supplying a silicon source, carbon source, oxygen source, and inert gas into an reaction area, and the reaction area includes the substrate. The method further comprises a process of generating an electric field in the reaction area. The electric field is formed using low- and high-frequency RF energy generated by a RF power supply. The RF power supply applies electric power used for plasma discharge in the reaction area to electrode surfaces. The method further comprises the process of reacting silicon and carbon source gas in order to deposit the silicon carbide film on the substrate. The RF power supply generates high-energy RF electric power and low-energy RF electric power during a processing time. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
