| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor display plate and a method for manufacturing the same which requires only a reduced number of times of photo steps and as a result reduces the manufacturing cost. <P>SOLUTION: A gate line is formed on a substrate. Next, a gate insulating film and a semiconductor layer are continuously laminated on the gate line. A lower conductive film and an upper conductive film are vapor deposited on the semiconductor layer. Next, the upper conductive film, the lower conductive film and the semiconductor layer are photo-etched and subsequently a protective film is vapor deposited and the protective film is photo-etched so as to expose a first part and a second part of the upper conductive film. Next, the first part and the second part of the upper conductive film are removed so as to expose a first part and a second part of the lower conductive film. Subsequently, while forming a pixel electrode which covers the first part of the lower conductive film and an auxiliary source electrode and an auxiliary drain electrode which expose a portion of the second part thereof, the second part of the lower conductive film between the auxiliary source electrode and the auxiliary drain electrode is removed so as to expose a part of the semiconductor layer. Next, an insulating film and a black matrix are formed on the exposed part of the semiconductor layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
