Thin film transistor substrate

摘要

A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

主权项

1. A thin film transistor substrate, comprising:
a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor; a source electrode and a drain electrode disposed on the semiconductor layer, wherein the drain electrode is spaced apart from the source electrode; and a capping layer disposed on the main wiring layer and that includes a transparent conductive oxide, wherein the source electrode and the drain electrode each include a barrier layer and a main wiring layer disposed on the barrier layer, and wherein the barrier layer includes a first metal layer disposed on the semiconductor layer and a second metal layer disposed on the first metal layer.