发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve the connection reliability of a high-frequency semiconductor device incorporated in portable communication equipment, etc. <P>SOLUTION: A substrate 9 of multiple allocation is prepared with a plurality of non-through holes 5c which are opened on the rear surface 5b of the substrate 9 and conductor sections 5d formed from the rear surface 5b to the non-through holes 5c. Then, after a semiconductor chip 1 is mounted on the device region of the substrate 9 and electrically connected to the substrate 9, a collective sealing section 10 is formed on the main surface 5a of the substrate 9 without allowing a silicone resin from entering into the non-through holes 5c by means of the bottoms 5e of the holes 5c by supplying the silicone resin onto the main surface 5a of the substrate 9. Consequently, the semiconductor device having the plurality of conductors 5d from the ends to the side faces of the rear surface 5b can be assembled, and the connection reliability of the semiconductor device can be improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006013236(A) 申请公布日期 2006.01.12
申请号 JP20040190062 申请日期 2004.06.28
申请人 RENESAS TECHNOLOGY CORP;HITACHI HYBRID NETWORK CO LTD;HITACHI HIGH-TECH DE TECHNOLOGY CO LTD 发明人 DEURA AKIRA;KIKUCHI SAKAE;SUDO KAZUO;FUJII NORIKAZU
分类号 H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址