| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is provided with an STI having a laminated liner formed of a silicon oxide layer and a silicon nitride layer and can reduce electric static charging. SOLUTION: The semiconductor device comprises a silicon board, a trench which is formed downward from the surface of the silicon board to demarcate an active area on the surface thereof, a first liner layer formed of a silicon oxide layer to cover the internal wall of the trench, a second liner layer formed of a silicon nitride layer that is formed on the first liner layer, an element isolation area which is formed on the second liner layer to fill the trench, a p-channel MOS transistor formed in the active area, a contact etch stopper layer formed of a silicon nitride layer that is formed above the silicon board while covering the p-channel MOS transistor and that does not have ultraviolet light shielding performance, and a light shielding film which is formed above the contact etch stopper layer and has ultraviolet light shielding performance. COPYRIGHT: (C)2006,JPO&NCIPI |
