| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device with improved resistance to partial discharge and dielectric breakdown. SOLUTION: The semiconductor device has a resin case including a threaded hole, an insulation substrate with a semiconductor chip mounted, a heatsink including a heatsink through hole and having the insulation substrate mounted, and a metallic tapping screw passing through the heatsink through hole and the threaded hole to have the resin case engaged with the heatsink. A void in the threaded hole formed between the resin case and the metallic tapping screw is filled with a resin having high withstand voltage. COPYRIGHT: (C)2006,JPO&NCIPI |
