| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process of a capacitor for forming a high dielectric metal oxide film on a silicon layer, and for preventing nitrogen from being transmitted through the high dielectric metal oxide film to the interface of a silicion layer, or for preventing a silicon nitride(SiN) layer from being formed at doping of nitrogen. SOLUTION: A high dielectric metal oxide film 121-1 in the first layer is formed on a silicon layer(first electrode 12). The high dielectric metal oxide film 121-1 is converted into a high dielectric metal oxynitride film 21-1 through nitriding treatment, and annealing treatment is carried out for densification. A high dielectric metal oxynitride film 121-2 in the second layer is formed on the high dielectric metal oxynitride film 21-1, and converted into a high dielectric metal oxynitride film 21-2 through nitriding treatment. In this case, nitrogen is prevented from being transmitted through the high dielectric metal oxynitride film 21-1 in the first layer to reach the surface of the silicon layer(first electrode 12), and a silicon nitride(SiN) layer will no longer be prevented from being formed on the interface of the silicon layer. COPYRIGHT: (C)2006,JPO&NCIPI
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