SEMICONDUCTOR STORAGE DEVICE

摘要

A semiconductor storage device includes: a semiconductor substrate; a first storage unit; a second storage unit including a plurality of the first storage units formed in a first direction parallel to the semiconductor substrate; a third storage unit including a plurality of the second storage units formed in a second direction perpendicular to the first direction and parallel to the semiconductor substrate; and a fourth storage unit including a plurality of the third storage units in a third direction perpendicular to the semiconductor substrate. A plurality of contacts coupling signal lines each configured to select an address in the second direction and the semiconductor substrate, is arranged in a region in which no interference with bit lines extending in the first direction occurs. Therefore, the semiconductor storage can perform reading and writing for large capacity at a high speed, and can be manufactured at a low cost, can be achieved.

主权项

1. A semiconductor storage device comprising:
a semiconductor substrate; a first storage unit; a second storage unit including a plurality of the first storage units formed in a first direction parallel to the semiconductor substrate; a third storage unit including a plurality of the second storage units formed in a second direction perpendicular to the first direction and parallel to the semiconductor substrate; and a fourth storage unit including a plurality of the third storage units in a third direction perpendicular to the semiconductor substrate, wherein a plurality of contacts coupling signal lines each configured to select an address in the second direction and the semiconductor substrate, is arranged in a region in which no interference with bit lines extending in the first direction occurs.