发明名称 |
MEMORY DEVICES HAVING SOURCE LINES DIRECTLY COUPLED TO BODY REGIONS AND METHODS |
摘要 |
Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing. |
申请公布号 |
US2017047120(A1) |
申请公布日期 |
2017.02.16 |
申请号 |
US201615339374 |
申请日期 |
2016.10.31 |
申请人 |
Micron Technology, Inc. |
发明人 |
Goda Akira |
分类号 |
G11C16/14;H01L27/115;G11C16/04 |
主分类号 |
G11C16/14 |
代理机构 |
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代理人 |
|
主权项 |
1. A memory device, comprising:
a data line; a source; a first string of memory cells coupled at a first end to the data line by a first select gate, and directly coupled at a second end to the source through a second select gate; a second string of memory cells coupled at a first end to the data line by a third select gate, and directly coupled at a second end to the source through a fourth select gate; and a controller, wherein the controller is configured to concurrently bias the data line and the source to substantially the same potential, and perform a program operation on a selected memory cell of the first string of memory cells. |
地址 |
Boise ID US |