发明名称 MEMORY DEVICES HAVING SOURCE LINES DIRECTLY COUPLED TO BODY REGIONS AND METHODS
摘要 Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing.
申请公布号 US2017047120(A1) 申请公布日期 2017.02.16
申请号 US201615339374 申请日期 2016.10.31
申请人 Micron Technology, Inc. 发明人 Goda Akira
分类号 G11C16/14;H01L27/115;G11C16/04 主分类号 G11C16/14
代理机构 代理人
主权项 1. A memory device, comprising: a data line; a source; a first string of memory cells coupled at a first end to the data line by a first select gate, and directly coupled at a second end to the source through a second select gate; a second string of memory cells coupled at a first end to the data line by a third select gate, and directly coupled at a second end to the source through a fourth select gate; and a controller, wherein the controller is configured to concurrently bias the data line and the source to substantially the same potential, and perform a program operation on a selected memory cell of the first string of memory cells.
地址 Boise ID US