Monolithic integrated circuit (MMIC) structure having composite etch stop layer and method for forming such structure

摘要

A method for forming a semiconductor structure having a transistor device with a control electrode for controlling a flow of carriers between a first electrode and a second electrode. A passivation layer is deposited over the first electrode, the second electrode and the control electrode. An etch stop layer is deposited on the passivation layer over the control electrode. The etch stop layer includes the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer. A dielectric layer is formed over the etch stop layer. A window is etched through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode. A metal layer is formed on a portion of the etch stop layer and the dielectric layer is also formed on the metal layer. A second metal layer is deposited on the portion of the dielectric layer formed on the first mentioned metal layer.

主权项

1. A semiconductor structure comprising;
a III-V semiconductor layer; source and drain electrodes in ohmic contact with the semiconductor layer; a gate electrode in Schottky contact with the semiconductor layer; a passivation layer disposed over the source, drain and gate electrodes, an etch stop layer disposed on the passivation layer, the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer; a dielectric layer disposed on a first portion of the etch stop layer, the dielectric layer having a window therein, such window exposing a second portion of the etch stop layer.